The daunting complexity of scaling to 7NM without EUV: pushing DTCO to the extreme

Author:

Liebmann Lars,Chu Albert,Gutwin Paul

Publisher

SPIE

Reference5 articles.

1. Phase edge lithography for sub 0.1 mu m electrical channel length in a 200 MM full CMOS process;Agnello,1995

2. Layout optimization at the pinnacle of optical lithography

3. Design implications of extremely restricted patterning

4. Bridging the resolution gap in 14 nm: designing for efficient transition to EUV (Invited Paper);Liebmann,2012

5. Innovations in Special Constructs for Standard Cell Libraries in Sub 28nm Technologies;Rashed,2013

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