Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers-Reference-Cited by-同舟云学术

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Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers

Published:2022-10-07 Issue:10 Volume:61 Page:
ISSN:0091-3286
Container-title:Optical Engineering
language:
Short-container-title:Opt. Eng.

Author:

Zhang Aoxiang¹,Ren Bingyang²,Wang Fang¹,Liou Juin J.¹,Liu Yuhuai¹

Affiliation:

1. Zhengzhou University, School of Information Engineering, National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, Zhengzhou, China

2. Zhengzhou University, School of Computer and Artificial Intelligence, Zhengzhou, China

Funder

National Natural Science Foundation of China

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes;Nanomaterials;2024-04-08

2. Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers;Optics Express;2024-03-06

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