High-power, high-brightness, high-reliability laser diodes emitting at 800-1000 nm-Reference-Cited by-同舟云学术

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High-power, high-brightness, high-reliability laser diodes emitting at 800-1000 nm

Published:2007-02-08 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Yanson Dan A.,Marsh John H.,Najda Stephen,McDougall Stewart D.,Fadli Hassan,Masterton Graeme,Qiu Bocang,Kowalski Olek P.,Bacchin Gianluca,McKinnon Gordon

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact 200 W level linearly polarized microsecond-pulse Nd:YAG oscillator with nearly diffraction-limited beam quality;Applied Optics;2022-06-21

2. High-brightness 808 nm semiconductor laser diode packaged by SiC heat sink;Journal of Modern Optics;2020-06-24

3. 915nm high-power broad area laser diodes with ultra-small optical confinement based on Asymmetric Decoupled Confinement Heterostructure (ADCH);High-Power Diode Laser Technology and Applications XIII;2015-03-13

4. InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering;Solid-State Electronics;2013-11

5. Technologies and Recent Progress of Near Infrared High Power Laser Diodes;The Review of Laser Engineering;2013

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