High-brightness 808 nm semiconductor laser diode packaged by SiC heat sink-Reference-Cited by-同舟云学术

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High-brightness 808 nm semiconductor laser diode packaged by SiC heat sink

Published:2020-06-24 Issue:11 Volume:67 Page:1017-1021
ISSN:0950-0340
Container-title:Journal of Modern Optics
language:en
Short-container-title:Journal of Modern Optics

Author:

Li Xingyu¹,Jiang Kai¹,Zhu Zhen²,Su Jian²,Xia Wei¹²,Xu Xiangang²

Affiliation:

1. School of Physics and Technology, University of Jinan, Jinan, People’s Republic of China

2. Shandong Huaguang Optoelectronics Co., Ltd., Jinan, People’s Republic of China

Publisher

Informa UK Limited

Subject

Atomic and Molecular Physics, and Optics

Link

https://www.tandfonline.com/doi/pdf/10.1080/09500340.2020.1810339

Reference12 articles.

1. High-power semiconductor lasers

2. High-power, high-brightness, high-reliability laser diodes emitting at 800-1000 nm

3. Cavity length and stripe width dependent lasing characteristics of InAs/InP(1 0 0) quantum dot lasers

4. Effects of heatsink on the performance of high power semiconductor lasers

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1. The improvement in heat transfer performance of single crystal silicon carbide with diamond film;Journal of Crystal Growth;2024-03

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