Simulation of novel InAlAsSb solar cells-Reference-Cited by-同舟云学术

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Simulation of novel InAlAsSb solar cells

Published:2012-02-09 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Lumb Matthew P.,Gonzalez Maria,Vurgaftman Igor,Meyer Jerry R.,Abell Joshua,Yakes Michael,Hoheisel Raymond,Tischler Joseph G.,Jenkins Phillip P.,Stavrinou Paul N.,Fuhrer Markus,Ekins-Daukes Ned J.,Walters Robert J.

Publisher

SPIE

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations;Solar Energy Materials and Solar Cells;2021-09

2. Designing an Epitaxially-Integrated DBR for Dislocation Mitigation in Monolithic GaAsP/Si Tandem Solar Cells;IEEE Journal of Photovoltaics;2021-03

3. Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells;Solar Energy Materials and Solar Cells;2021-01

4. Determination of the complex refractive index of compound semiconductor alloys for optical device modelling;Journal of Physics D: Applied Physics;2020-10-02

5. Effect of molecular beam epitaxy growth conditions on phase separation in wide-bandgap InAlAsSb lattice-matched to InP;Journal of Crystal Growth;2020-10

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