AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltage
Author:
Affiliation:
1. Ferdinand-Braun-Institut (Germany)
Publisher
SPIE
Reference36 articles.
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1. The Impacts of Different Electrode Structures on the Device Performance of β-(Al x Ga1−x )2O3/Ga2O3 Heterostructure Metal–Semiconductor–Metal Photodetectors;IEEE Transactions on Electron Devices;2024-02
2. Demonstration of Spectral Selectivity of Efficient and Ultrafast GaN/AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes;IEEE Transactions on Electron Devices;2022-12
3. Electrical performance analysis of Al0.5Ga0.5 N/AlN/Sapphire-based MSM UV detector for high photocurrent;Journal of Optics;2022-07-06
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