The Impacts of Different Electrode Structures on the Device Performance of β-(Al x Ga1−x )2O3/Ga2O3 Heterostructure Metal–Semiconductor–Metal Photodetectors-Reference-Cited by-同舟云学术

The Impacts of Different Electrode Structures on the Device Performance of β-(Al_xGa_1−x)₂O3/Ga₂O₃ Heterostructure Metal–Semiconductor–Metal Photodetectors

Published:2024-02 Issue:2 Volume:71 Page:1010-1017
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Yan¹,Wang Ping¹^ORCID,Fan Weijun²,Yang Ting¹,Wang Qijie²^ORCID

Affiliation:

1. State Key Laboratory of Integrated Service Networks, School of Telecommunications Engineering, Xidian University, Xi’an, China

2. School of Electrical and Electronic Engineering, Nanyang Technological University, Jurong West, Singapore

Funder

National Natural Science Foundation of China

Key Research and Development Program of Shaanxi Province of China

China Scholarship Council

Fundamental Research Funds for the Central Universities and the Innovation Fund of Xidian University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10413236/10381762.pdf?arnumber=10381762

Reference51 articles.

1. Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors based on β-Ga2O3 (1 0 0) surface

2. Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga2O3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector

3. Leaky Mode Resonance-Induced Sensitive Ultraviolet Photodetector Composed of Graphene/Small Diameter Silicon Nanowire Array Heterojunctions

4. Ultrahigh Performance of Self-Powered β-Ga2O3 Thin Film Solar-Blind Photodetector Grown on Cost-Effective Si Substrate Using High-Temperature Seed Layer

5. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector