Interfacial quality of high-reflectivity Mo-Si multilayers for EUV mask blanks-Reference-Cited by-同舟云学术

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Interfacial quality of high-reflectivity Mo-Si multilayers for EUV mask blanks

Published:2019-09-26 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2019
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Author:

Srinivasan Narasimhan,Rook Katrina,Turner Paul,Henry Tania,Yamamoto Kenji,Donnelly Devlin,Nguyen Thu Van Thi,Ip Vincent,Lee Meng H.,Kohli Sandeep,Cerio Frank,Devahasayam Adrian J.

Publisher

SPIE

Reference9 articles.

1. EUV Lithography, Second Edition

2. Mask blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

3. Interfacial reactions on annealing molybdenum‐silicon multilayers

4. Silicide layer growth in Mo/Si multilayers;Rosen;Applied Optics 32,1983

5. Growth and crystallization of molybdenum layers on amorphous silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of ion-beam-deposited Mo/Si multilayers for extreme ultraviolet masks;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-06-17

2. Refined extreme ultraviolet mask stack model;Journal of the Optical Society of America A;2021-03-04

3. Process optimization for performance improvement in Mo/Si multilayers for EUV mask blanks;Extreme Ultraviolet Lithography 2020;2020-10-15

4. State of the Art and Future Perspectives in Advanced CMOS Technology;Nanomaterials;2020-08-07

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