Analysis of short pulse generation from excited state of InAs-InP (113) B quantum dot laser based on multi-population rate equation-Reference-Cited by-同舟云学术

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Analysis of short pulse generation from excited state of InAs-InP (113) B quantum dot laser based on multi-population rate equation

Published:2022-03-04 Issue: Volume: Page:
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Container-title:Physics and Simulation of Optoelectronic Devices XXX
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Author:

Duranoglu Tunc Hilal Sultan,Dogru Nuran,Cengiz Erkan

Publisher

SPIE

Reference9 articles.

1. Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100)

2. Analysis of carrier dynamics and laser emission in 1.55 μm InAs/InP(1113)B quantum dot lasers;Even,2010

3. SEMICONDUCTOR QUANTUM DOT LASERS AS PULSE SOURCES FOR HIGH BIT RATE DATA TRANSMISSION

4. Time-Domain Traveling-Wave Analysis of the Multimode Dynamics of Quantum Dot Fabry–Perot Lasers

5. Effect of homogeneous broadening of optical gain on lasing spectra in self-assembledInxGa1−xAs/GaAsquantum dot lasers

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