Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Gain and the threshold of three-dimensional quantum-box lasers
3. Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy
4. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy
5. Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy
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2. RIN Reduction in Gain-Switched InAs-InP(113)B Quantum Dot Laser Based on Multi-Population Rate Equations;IEEE Transactions on Electron Devices;2023-07
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4. Gain-Switched Short Pulse Generation from 1.55 µm InAs/InP/(113)B Quantum Dot Laser Modeled Using Multi-Population Rate Equations;Mathematics;2022-11-17
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