Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives-Reference-Cited by-同舟云学术

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Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives

Published:2015-03-20 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Advances in Patterning Materials and Processes XXXII
language:
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Author:

Kulshreshtha Prashant,Maruyama Ken,Dhuey Scott,Ziegler Dominik,Chao Weilun,Ashby Paul,Olynick Deirdre

Publisher

SPIE

Reference14 articles.

1. Materials challenges for sub-20-nm lithography

2. 22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool

3. Extendibility of chemically amplified resists: another brick wall?;Hinsberg,2003

4. Radiation Chemistry in Chemically Amplified Resists

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative-tone organic molecular resists;Materials and Processes for Next Generation Lithography;2016

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