Influence of resonator length on catastrophic optical damage in high-power AlGaInP broad-area lasers
Author:
Affiliation:
1. Notre Dame Univ., Louaize (Lebanon)
Publisher
SPIE
Reference11 articles.
1. Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs‐GaAs laser facets
2. 150 mW fundamental-transverse-mode operation of 670 nm window laser diode
3. Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing
4. Thermal rollover characteristics up to 150/spl deg/C of buried-stripe type 980-nm laser diodes with a current injection window delineated by a SiNx layer
5. Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers
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