Investigation of the electrophysical and mechanical properties of metallization based on alloys W with Re, Ti, N for high-temperature silicon VLSI-Reference-Cited by-同舟云学术

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Investigation of the electrophysical and mechanical properties of metallization based on alloys W with Re, Ti, N for high-temperature silicon VLSI

Published:2022-01-31 Issue: Volume: Page:
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Container-title:International Conference on Micro- and Nano-Electronics 2021
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Author:

Timakov Aleksey,Vasiliy Shevyakov

Publisher

SPIE

Reference13 articles.

1. Watson and Castro G. High-Temperature Electronics Pose Design and Reliability Challenges / Analog Dialogue, 2014, vol.46, pp. 1-7.

2. Multilevel metallization for high temperature microelectronics / Electronic engineering. Series 2;Babkin;Semiconductor devices,2016

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rhenium Effect in Thin Films and Wires of Tungsten–Rhenium Alloys;Russian Microelectronics;2023-12

2. ИССЛЕДОВАНИЕ ВЛИЯНИЯ ПРИМЕСИ РЕНИЯ НА МЕХАНИЧЕСКИЕ СВОЙСТВА ТОНКИХ ПЛЕНОК ВОЛЬФРАМА МЕТАЛЛИЗАЦИИ ВЫСОКОТЕМПЕРАТУРНЫХ КРЕМНЕВЫХ ИС;Электронная техника. Серия 3. Микроэлектроника;2023

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