Novel EUV mask black border and its impact on wafer imaging-Reference-Cited by-同舟云学术

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Novel EUV mask black border and its impact on wafer imaging

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Kodera Yutaka¹,Fukugami Norihito¹,Komizo Toru¹,Watanabe Genta¹,Ito Shin¹,Yoshida Itaru¹,Maruyama Shingo¹,Kotani Jun¹,Konishi Toshio¹,Haraguchi Takashi¹

Affiliation:

1. Toppan Printing Co., Ltd. (Japan)

Publisher

SPIE

Reference9 articles.

1. Black border with etched multilayer on EUV mask;Fukugami,2012

2. Impact of an etched EUV mask black border on imaging and overlay;Davydova,2012

3. Impact of an etched EUV mask Black Border on imaging and overlay: part II;Davydova,2013

4. Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond;Davydova,2014

5. Effects of mask absorber thickness on printability in EUV lithography with high resolution resist;Kamo,2008

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of an EUV and OoB Reflectometer at NewSUBARU synchrotron light facility;Photomask Technology 2019;2019-09-26

2. EUV mask with advanced hybrid black border suppressing EUV and DUV OOB light reflection;Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology;2018-06-12

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