Physics of failure investigation in high-power broad-area InGaAs-AlGaAs strained quantum well lasers-Reference-Cited by-同舟云学术

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Physics of failure investigation in high-power broad-area InGaAs-AlGaAs strained quantum well lasers

Published:2012-02-09 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Sin Yongkun,LaLumondiere Stephen D.,Presser Nathan,Foran Brendan J.,Ives Neil A.,Lotshaw William T.,Moss Steven C.

Publisher

SPIE

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation processes in high-power broad-area lasers with strained InGaAs-AlGaAs QW and InAs-GaAs QD active regions;High-Power Diode Laser Technology XX;2022-03-04

2. Modeling of influencing factors driving thermal runaway in 9xx-nm high-power laser diodes;2021 27th International Semiconductor Laser Conference (ISLC);2021-10-10

3. Reliability and degradation mechanisms in high-power broad-area lasers with strained InGaAs-AlGaAs QW and InAs-GaAs QD active regions;High-Power Diode Laser Technology XIX;2021-03-05

4. Thermomechanical issues of high power laser diode catastrophic optical damage;Journal of Physics D: Applied Physics;2019-06-24

5. A temperature effect study on the laser diode module spectral characteristics;Journal of Physics: Conference Series;2019-06-01

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