Evaluation of novel processing approaches to improve extreme ultraviolet (EUV) photoresist pattern quality

Author:

Montgomery Cecilia,Chun Jun Sung,Fan Yu-Jen,Jen Shih-Hui,Neisser Mark,Cummings Kevin D.,Montgomery Warren,Saito Takashi,Huli Lior,Hetzer David,Matsumoto Hiroie,Metz Andrew,Rastogi Vinayak

Publisher

SPIE

Reference22 articles.

1. Yu-Jen Fan, SEMATECH Inc. (United States); Ken Maruyama, Ramakrishnan Ayothi, Takehiko Naruoka, JSR Micro, Inc. (United States); Tonmoy Chakraborty, Dominic Ashworth, SEMATECH Inc. (United States); Jun Sung Chun, SEMATECH/CNSE (United States); Cecilia A. Montgomery, Shih-Hui Jen, Mark Neisser, Kevin D. Cummings, SEMATECH Inc. (United States) “First results of outgas resist family test and correlation between outgas specifications and EUV resist development” SPIE 2015 (9422-36)

2. High speed EUV using post processing and self-aligned double patterning as a speed enhancement technique;Wandell,2014

3. Jun Sung Chun, Shiu-Hui Jen, Karen Petrillo, Dominic Ashworth, Mark Neisser, Takashi Saito, Lior Huli, Metz Andrew, “Enabling robust EUV lithography for NXE3300 applications : 2013 SEMATECH’s Cycles Of Learning Project Combined with TEL” EUV Symposium, Toyama, Japan October 2013

4. Resist process applications to improve EUV patterning;Petrillo,2013

5. Assessment of EUV Resist Performance f or sub-22nm HP lines and 26nm contacts on NXE3100;Goethals,2012

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Pattern uniformity control in integrated structures;SPIE Proceedings;2017-03-27

2. Quantification of the resist dissolution process: an in situ analysis using high speed atomic force microscopy;SPIE Proceedings;2016-03-31

3. Overview of materials and processes for lithography;Materials and Processes for Next Generation Lithography;2016

4. Chemically amplified resists and acid amplifiers;Materials and Processes for Next Generation Lithography;2016

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