Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si-Reference-Cited by-同舟云学术

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Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si

Published:2012-01-21 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Quantum Sensing and Nanophotonic Devices IX
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Author:

Nguyen Thanh T.,Robert C.,Cornet C.,Guo W.,Letoublon A.,Perrin M.,Bertru N.,Even J.,Chevalier N.,Folliot H.,Loualiche S.,Ponchet A.,Elias G.,Micha J. S.,Durand O.,Le Corre A.

Publisher

SPIE

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal behavior and carrier injection of GaAs/GaP quantum dots light emitting diodes;Applied Physics Letters;2017-02-27

2. Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster;Journal of Crystal Growth;2013-10

3. Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications;Quantum Sensing and Nanophotonic Devices X;2013-02-04

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