Compatibility between polymethacrylate-based extreme ultraviolet resists and TiO2 area-selective deposition
Author:
Affiliation:
1. IMEC, Leuven, Belgium
2. FUJIFILM Corporation Electronic Materials Research Laboratories, Yoshida-Cho, Japan
3. North Carolina State University, Department of Chemical and Biomolecular Engineering, Raleigh, North Carolina, United States
Publisher
SPIE-Intl Soc Optical Eng
Subject
General Arts and Humanities
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Quantified Uniformity and Selectivity of TiO2 Films in 45‐nm Half Pitch Patterns Using Area‐Selective Deposition Supercycles;Advanced Materials Interfaces;2023-06-17
2. Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications;Japanese Journal of Applied Physics;2023-06-01
3. In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor;Journal of Vacuum Science & Technology A;2023-03-30
4. Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions;Journal of Vacuum Science & Technology A;2023-03-16
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