100mm GaSb substrate manufacturing for IRFPA epi growth
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SPIE
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved surface and electrical properties of passivated GaSb with less alkaline sulfide solution;Materials Science in Semiconductor Processing;2015-12
2. Chemical and electrical properties of (NH4)2S passivated GaSb surface;Journal of Semiconductors;2015-07
3. Suppressing the spread length of threading dislocations in AlSb/GaSb superlattice grown on (001) InP substrate;Applied Physics A;2013-09-18
4. Sb-based IR photodetector epiwafers on 100mm GaSb substrates manufactured by MBE;Infrared Physics & Technology;2013-07
5. MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05
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