Influence of etch process on contact hole local critical dimension uniformity in extreme-ultraviolet lithography

Author:

Lorusso Gian F.,Mao Ming,Reijnen Liesbeth,Viatkina Katja,Knops Roel,Rispens Gijsbert,Fliervoet Timon

Publisher

SPIE

Reference4 articles.

1. Quantification of shot noise contributions to contact hole local CD nonuniformity;Gronheid,2012

2. EUV stochastic noise analysis and LCDU mitigation by etching on dense contact-hole array patterns;Kim,2014

3. Montgomery, D.C., “Design and Analysis of Experiment,” John Wiley & Sons, Inc. (2009).

4. Aspect ratio dependent etching lag reduction in deep silicon etch processes

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1. New approach of local critical dimension uniformity improvement for via/contact hole etch with direct current superposition;Journal of Vacuum Science & Technology B;2024-04-19

2. Impact of mask corner rounding on pitch 40 nm contact hole variability;International Conference on Extreme Ultraviolet Lithography 2021;2021-10-12

3. Measuring and analyzing contact hole variations in EUV lithography;Extreme Ultraviolet (EUV) Lithography XII;2021-03-09

4. Simulation investigation of enabling technologies for EUV single exposure of Via patterns in 3nm logic technology;Extreme Ultraviolet (EUV) Lithography XI;2020-04-02

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