New materials for 157-nm photoresists: characterization and properties-Reference-Cited by-同舟云学术

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New materials for 157-nm photoresists: characterization and properties

Published:2000-06-23 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Advances in Resist Technology and Processing XVII
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Author:

Crawford Michael K.,Feiring Andrew E.,Feldman Jerald,French Roger H.,Periyasamy Mookkan P.,Schadt III Frank L.,Smalley Robert J.,Zumsteg, Jr. Fredrick C.,Kunz Roderick R.,Rao Veena,Liao Ling,Holl Susan M.

Publisher

SPIE

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in Patterning Materials for 193 nm Immersion Lithography;Chemical Reviews;2010-01-13

2. Pattern Generation;Copper Interconnect Technology;2009

3. Novel low-reflective index fluoropolymers-based top anti-reflective coatings (TARC) for 193-nm lithography;SPIE Proceedings;2007-03-16

4. Novel Low Reflective Index Fluoropolymers based Top Anti-reflective Coatings (TARC) for 193-nm Lithography;Journal of Photopolymer Science and Technology;2007

5. Novel fluorinated polymers for application in 193-nm lithography and 193-nm immersion lithography;SPIE Proceedings;2006-03-10

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