Mask aspects of EUVL imaging at 27nm node and below-Reference-Cited by-同舟云学术

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Mask aspects of EUVL imaging at 27nm node and below

Published:2011-10-06 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Davydova Natalia,van Setten Eelco,Han Sang-In,van de Kerkhof Mark,de Kruif Robert,Oorschot Dorothe,Zimmerman John,Lammers Ad,Connolly Brid,Driessen Frank,van Oosten Anton,Dusa Mircea,van Dommelen Youri,Harned Noreen,Jiang Jiong,Liu Wei,Kang Hoyoung,Liu Hua-yu

Publisher

SPIE

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of mask topography and flare on process window of EUV lithography;International Conference on Extreme Ultraviolet Lithography 2019;2019-09-26

2. Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner;SPIE Proceedings;2017-03-24

3. Experimental validation of novel mask technology to reduce mask 3D effects;SPIE Proceedings;2015-10-23

4. Experimental validation of novel EUV mask technology to reduce mask 3D effects;SPIE Proceedings;2015-09-04

5. Alternative EUV mask technology to compensate for mask 3D effects;Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII;2015-07-09

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