Growth and characterization of detector-grade CdZnTeSe by horizontal Bridgman technique
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SPIE
Reference13 articles.
1. Development of Cadmium Magnesium Telluride (Cd1−xMgxTe) for room temperature X- and gamma-ray detectors
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1. Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection;Electronics Letters;2024-09
2. Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors;Sensors;2024-01-06
3. Hardening of multi-component CdZnTeSe solid solutions: a theoretical approach;Applied Physics A;2023-11
4. Charge Trapping Effects in THM- and VGF-Grown CdZnTeSe Radiation Detectors;IEEE Transactions on Nuclear Science;2023-09
5. Growth interface study of CdTeSe crystals grown by the THM technique;Journal of Crystal Growth;2023-08
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