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Unraveling the EUV photoresist reactions: which, how much, and how do they relate to printing performance

  • Published:2019-03-26 Issue: Volume: Page:
  • ISSN:
  • Container-title:Extreme Ultraviolet (EUV) Lithography X
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Author:

Pollentier Ivan,Petersen John S.,De Bisschop Peter,De Simone Danilo,Vandenberghe Geert

Publisher

SPIE

Reference19 articles.

1. “Closing remarks of the ‘2018 EUVL Symp.’” Monterey, California (unpublished) (2018)

2. Stochastic effects in EUV lithography: random, local CD variability, and printing failures;De Bisschop;J. Micro/Nanolith. MEMS MOEMS,2017

3. Resist pattern prediction at EUV;Biafore,2010

4. Chemical Amplification Resists for Microlithography;Ito,2005

5. Characterization and Modeling of a Positive Acting Chemically Amplified Resist;Petersen,1995

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of electron-induced chemical transformations in polymers;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-07-16

2. Study of electron-induced chemical transformations in model resists;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

3. Photoemission spectroscopy on photoresist materials: A protocol for analysis of radiation sensitive materials;Journal of Vacuum Science & Technology A;2023-08-01

4. Evaluating nanoscale molecular homogeneity in extreme ultraviolet resists with nanoprojectile secondary ion mass spectrometry;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-11-07

5. Evaluating nanoscale molecular homogeneity in EUV resists with nano-projectile SIMS;Advances in Patterning Materials and Processes XXXIX;2022-05-25
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