EUV implementation of assist features in contact patterns-Reference-Cited by-同舟云学术

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EUV implementation of assist features in contact patterns

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Jiang Fan¹,Raghunathan Ananthan¹,Burkhardt Martin²,Saulnier Nicole²,Tritchkov Alexander¹,Jayaram Srividya¹,Word James¹

Affiliation:

1. Mentor Graphics Corp. (United States)

2. IBM Corp. (United States)

Publisher

SPIE

Reference6 articles.

1. Assist features: placement, impact and relevance for EUV imaging;Mochia,2016

2. Implementation of Assist Features in EUV Lithography;Jiang,2015

3. Algorithmic implementations of domain decomposition methods for the diffraction simulation of advanced photomask;Adam,2002

4. Domain decomposition methods for the rapid electromagnetic simulation of photomask scattering;Adam,2002

5. Domain decomposition methods for simulation of printing and inspection of phase defects

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-Resolution Assist Feature in Attenuated Phase-Shift Mask for Extreme Ultraviolet Lithography;Nanoscience and Nanotechnology Letters;2016-09-01

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