Preparation of negative electron affinity gallium nitride photocathode

Author:

Qiao Jianliang,Chang Benkang,Qian Yunsheng,Du Xiaoqing,Zhang Yijun,Wang Xiaohui

Publisher

SPIE

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Gas adsorption on activated AlGaN photocathode: A first-principle study on charge redistribution, work function variation and emission performance attenuation;Surfaces and Interfaces;2024-08

2. The material property and electron emission for NEA GaN vacuum electron source;10th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Novel Optoelectronic Functional Materials and Devices;2021-12-13

3. Negative electron affinity of the GaN photocathode: a review on the basic theory, structure design, fabrication, and performance characterization.;Journal of Materials Chemistry C;2021

4. The evolution of GaN photocathode surface barrier before and after activation;9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging;2019-02-08

5. Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research;Chinese Optics Letters;2015

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