The evolution of GaN photocathode surface barrier before and after activation-Reference-Cited by-同舟云学术

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The evolution of GaN photocathode surface barrier before and after activation

Published:2019-02-08 Issue: Volume: Page:
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Container-title:9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging
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Author:

Wang Shengzhao,Huang Dayong,Qiao Jianliang

Publisher

SPIE

Reference12 articles.

1. GaN photocathodes for UV detection and imaging

2. Preparation of negative electron affinity gallium nitride photocathode;Qiao;Proceedings of SPIE.,2010

3. Photoemission of graded-doping GaN photocathode;XiaoQian;Chinese Physics B.,2011

4. The automatic recording system of dynamic spectral response and its applications;Benkang;SPIE.,2003

5. The Evaluation System of Negative Electron Affinity Photocathode;Rongguo;SPIE.,2001

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of photocathodes for electron beam sources in particle accelerators;Journal of Materials Chemistry C;2023

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