Comparison of thermal oxidation and plasma oxidation of 4H-SiC (0001) for surface flattening
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4868487
Reference23 articles.
1. Growth mechanism of 6H‐SiC in step‐controlled epitaxy
2. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
3. The effects of low-angle off-axis substrate orientation on MOSFET performance and reliability
4. Performance limiting surface defects in SiC epitaxial p-n junction diodes
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