A comparison of minority electron transport in In0.53Ga0.47As and GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109746
Reference14 articles.
1. Subpicosecond InP/InGaAs heterostructure bipolar transistors
2. Nonequilibrium electron transport in bipolar devices
3. Raman scattering study of coupled hole-plasmon–LO-phonon modes inp-type GaAs andp-typeAlxGa1−xAs
4. Evaluation of the temperature-dependent dielectric function in the valence band of zinc-blende-type semiconductors
5. Dielectric response functions of heavily doped zincblende semiconductors with finite particle lifetime
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1. DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors;IEEE Transactions on Electron Devices;2010-12
2. Electron Transport Through Abrupt Type I Double Heterojunction Bipolar Transistors;IEEE Transactions on Electron Devices;2010-06
3. Low Turn-On Voltage and High-Current $\hbox{InP}/ \hbox{In}_{0.37}\hbox{Ga}_{0.63}\hbox{As}_{0.89}\hbox{Sb}_{0.11}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Double Heterojunction Bipolar Transistors;IEEE Electron Device Letters;2008-07
4. Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Using an Undoped Photo-Absorption Layer;Japanese Journal of Applied Physics;2006-04-25
5. Neutral base recombination in InP∕GaAsSb∕InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers;Applied Physics Letters;2005-06-20
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