Validating Raman spectroscopic calibrations of phonon deformation potentials in silicon single crystals: A comparison between ball-on-ring and micro-indentation methods-Reference-Cited by-同舟云学术

Validating Raman spectroscopic calibrations of phonon deformation potentials in silicon single crystals: A comparison between ball-on-ring and micro-indentation methods

Published:2011-11 Issue:9 Volume:110 Page:093511
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Miyatake Takahiro,Pezzotti Giuseppe

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3656447

Reference30 articles.

1. Effect of static uniaxial stress on the Raman spectrum of silicon

2. Effects of interband excitations on Raman phonons in heavily dopedn−Si

3. Piezo-Raman measurements and anharmonic parameters in silicon and diamond

4. Resonance Raman scattering in InSb: Deformation potentials and interference effects at theE1gap

5. Raman determination of phonon deformation potentials in α-GaN

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