A general metrology of stress on crystalline silicon with random crystal plane by using micro-Raman spectroscopy
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Computational Mechanics
Link
http://link.springer.com/article/10.1007/s10409-018-0797-5/fulltext.html
Reference44 articles.
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4. Qiu, W., Cheng, C.L., Liang, R.R., et al.: Measurement of residual stress in a multi-layer semiconductor heterostructure by micro-Raman spectroscopy. Acta. Mech. Sin. 32, 805–812 (2016)
5. Sirleto, L., Vergara, A., Ferrara, M.A.: Advances in stimulated Raman scattering in nanostructures. Adv. Opt. Photon. 9, 169–217 (2017)
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