Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)-Reference-Cited by-同舟云学术

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Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

Published:2014-08-25 Issue:8 Volume:105 Page:081606
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

King Sean W.¹²,Nemanich Robert J.³⁴,Davis Robert F.¹⁵

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

2. Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, USA

3. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA

4. Department of Physics, Arizona State University, Tempe, Arizona 85281, USA

5. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA

Funder

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4894010

Reference39 articles.

1. Epitaxial growth and properties of semiconducting ScN

2. Linear response theoretical study of the exchange interactions in Mn-doped ScN: Effects of disorder, band gap, and doping

3. ScGaNalloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase

4. Piezoelectric Al1−xScxN thin films: A semiconductor compatible solution for mechanical energy harvesting and sensors

5. First-principles analysis of ZrN/ScN metal/semiconductor superlattices for thermoelectric energy conversion

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1. Environmental stability and ageing of ScN thin films from XPS Ar+ depth profiling;Applied Surface Science;2024-11

2. Analysis of phase stability, elastic, electronic, thermal, and optical properties of Sc1-xYxN via ab initio methods;Journal of Molecular Modeling;2022-12-21

3. Band alignment of ScAlN/GaN heterojunction;Applied Physics Letters;2020-12-07

4. Correlation between crystallization and oxidation process of ScN films exposed to air;Applied Surface Science;2020-06

5. Giant polarization charge density at lattice-matched GaN/ScN interfaces;Applied Physics Letters;2019-12-02

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