Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment-Reference-Cited by-同舟云学术

Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment

Published:2000-02-07 Issue:6 Volume:76 Page:697-699
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vyvenko O. F.,Krüger O.,Kittler M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.125865

Reference10 articles.

1. Hydrogen passivation of defects in silicon ribbon grown by the edge‐defined film‐fed growth process

2. Ebic Analysis of Hydrogen Passivation of Defects in Silicon

3. Gettering and hydrogen passivation of edge‐defined film‐fed grown multicrystalline silicon solar cells by Al diffusion and forming gas anneal

4. Temperature-Dependent EBIC Diffusion-Length Measurements in Silicon

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