Barrier-free tunneling in a carbon heterojunction transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3431661
Reference12 articles.
1. End of Moore's law: thermal (noise) death of integration in micro and nano electronics
2. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
3. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
4. Longitudinal unzipping of carbon nanotubes to form graphene nanoribbons
5. Narrow graphene nanoribbons from carbon nanotubes
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2. Explaining Steep-Slope Switching in Carbon Nanotube Dirac-Source Field-Effect Transistors;IEEE Transactions on Electron Devices;2022-09
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4. Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance;Nanomaterials;2022-01-28
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