Negative differential conductance due to resonant states in GaInAs/InP hot‐electron transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103956
Reference14 articles.
1. Ballistic transport in semiconductor alloys
2. Novel high‐speed transistor using electron‐wave diffraction
3. Observation of electron quantum interference effects due to virtual states in a double‐barrier heterostructure at room temperature
4. Hot-electron magnetospectroscopy in resonant tunneling devices: A probe of conduction-band anisotropy
5. Scattering-controlled transmission resonances and negative differential conductance by field-induced localization in superlattices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of Phase Breaking Effect in Resonant Tunneling Diodes Using Correlation Function;Japanese Journal of Applied Physics;1994-05-15
2. Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices;Japanese Journal of Applied Physics;1994-01-30
3. Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes;Japanese Journal of Applied Physics;1993-02-15
4. High P/V ratio of GaInAs/InP resonant tunneling diode grown by OMVPE;Journal of Crystal Growth;1992-11
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