High P/V ratio of GaInAs/InP resonant tunneling diode grown by OMVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Novel high‐speed transistor using electron‐wave diffraction
2. Negative differential conductance due to resonant states in GaInAs/InP hot‐electron transistors
3. AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio
4. Microwave performance of pseudomorphic resonant-tunnelling hot electron transistors at 77 K
5. Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE;Solid-State Electronics;1999-08
2. Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;1998-02-15
3. High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes;Japanese Journal of Applied Physics;1997-08-15
4. MOVPE growth of and heterostructures for electronic transport applications;Journal of Crystal Growth;1997-01
5. Evaluation of Hot Electron Coherent Length Using Well Width Dependence of the Resonance Characteristics of Resonant Tunneling Diodes;Japanese Journal of Applied Physics;1995-08-30
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