GaInAsP/InP lasers with etched mirrors by reactive ion etching using a mixture of ethane and hydrogen
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100749
Reference14 articles.
1. Reactive‐ion etching of GaAs and InP using CCl2F2/Ar/O2
2. Reactive ion etching of GaAs in CCl4−xFx(x=0, 2, 4) and mixed CCl4−xFx/Ar discharges
3. Fabrication and characteristics of ion beam etched cavity InP/InGaAsP BH lasers
4. GaAs/AlGaAs ridge waveguide laser monolithically integrated with a photodetector using ion beam etching
5. GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet
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4. Fabrication of Two-Depth Apodized Grating by Selective Etching of InP in CH4/H2Reactive Ion Etching;Japanese Journal of Applied Physics;2011-07-20
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