Photoluminescence of gallium arsenide encapsulated with aluminum nitride and silicon nitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91211
Reference9 articles.
1. Photoluminescence of thermally treatedn‐type Si‐doped GaAs
2. Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAs
3. Photoluminescence study of native defects in annealed GaAs
4. Tellurium implantation in GaAs
5. High‐efficiency ion‐implanted lo‐hi‐lo GaAs IMPATT diodes
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon Nitride in Encapsulation and Recrystallization;Si Silicon;1991
2. Optical and electrical characterizations of laser–chemical‐vapor‐deposited aluminum oxynitride films;Journal of Applied Physics;1986-05
3. Optical properties of aluminum oxynitrides deposited by laser-assisted CVD;Applied Optics;1986-04-15
4. Growth and photoluminescence study of several single crystal segments relevant to monolithic semiconductor cascade solar cells;Journal of Crystal Growth;1983-09
5. Passivation of GaAs surfaces*;Journal of Electronic Materials;1983-03
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