Thermal characteristics of blue‐green II‐VI semiconductor lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357344
Reference17 articles.
1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
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4. Blue‐green injection lasers containing pseudomorphic Zn1−xMgxSySe1−ycladding layers and operating up to 394 K
5. Structural characterization of II‐VI separate confinement heterostructure lasers with Zn1−xMgxSySe1−y cladding layers
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2. Simultaneous determination of the thermal diffusivity of semiconductor lasers and resistance of their adhesive joints;International Journal of Heat and Mass Transfer;1998-06
3. Degradation of II-VI blue-green semiconductor lasers;IEEE Journal of Quantum Electronics;1998-05
4. Thermal characterisation of semiconductor devices and adhesive bonds: application to a double heterostructure laser diode;High Temperatures-High Pressures;1998
5. Calculation of the thermal resistance and temperature distribution in blue - green semiconductor lasers;Semiconductor Science and Technology;1997-12-01
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