Thermally activated real‐space‐transfer noise in pseudomorphic high‐electron‐mobility transistors

Author:

van Die A.,Dijkhuis J. I.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs Technology;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

2. Theory of drain noise in high electron mobility transistors based on real-space transfer;Journal of Applied Physics;2022-02-28

3. Decomposition of1/fNoise inAlxGa1−xAs/GaAsHall Devices;Physical Review Letters;2006-05-08

4. The 1/f noise of InP based 2DEG devices and its dependence on mobility;IEEE Transactions on Electron Devices;1999

5. Low‐frequency noise measurements of AlxGa1−xAs/InyGa1−yAs/GaAs high electron mobility transistors;Journal of Applied Physics;1995-08-15

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