Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission-Reference-Cited by-同舟云学术

Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission

Published:2020-05-26 Issue:21 Volume:116 Page:212102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Y. H.¹,Xu F. J.¹^ORCID,Xie N.¹,Wang J. M.¹,Zhang N.¹,Lang J.¹^ORCID,Liu B. Y.¹,Fang X. Z.¹,Wang L. B.¹,Ge W. K.¹,Kang X. N.¹,Qin Z. X.¹,Yang X. L.¹^ORCID,Wang X. Q.¹^ORCID,Shen B.¹

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0008339

Reference26 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Survey of ultraviolet non-line-of-sight communications