Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission
Author:
Affiliation:
1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China
Funder
National Key R&D Program of China
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0008339
Reference26 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides
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4. AlGaN photonics: recent advances in materials and ultraviolet devices
5. The emergence and prospects of deep-ultraviolet light-emitting diode technologies
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