Single‐mode operation of coupled‐cavity GaInAsP/InP semiconductor lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93729
Reference9 articles.
1. Wavelength variation of 1.6 µm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation
2. External cavity controlled single longitudinal mode laser transmitter module
3. Single-mode oscillation under high-speed direct modulation in GaInAsP/InP integrated twin-guide lasers with distributed Bragg reflectors
4. Lasing characteristics of 1.5 - 1.6 µm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors
5. Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching
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