Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92353
Reference8 articles.
1. Ultimate low-loss single-mode fibre at 1.55 μm
2. Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver
3. GaInAsP/InP laser with monolithically integrated monitoring detector
4. GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 µm Wavelength
5. GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet
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