Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2196233
Reference13 articles.
1. Ion-implantation in bulk semi-insulating 4H–SiC
2. Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)
3. Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing
4. Investigation of Al-implanted 6H– and 4H–SiC layers after fast heating rate annealings
5. Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiC
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3. About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C;Materials Science Forum;2018-06
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