Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1418261
Reference35 articles.
1. Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors
2. Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors
3. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
4. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
5. Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping technique
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1. Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current;Applied Physics Letters;2015-01-26
2. INFLUENCES OF ASYMMETRICALLY DISTRIBUTED DEFECT STATES AT REAR c-Si/a-Si:H INTERFACE ON PERFORMANCES OF SILICON HETERO-JUNCTION SOLAR CELLS;International Journal of Modern Physics B;2013-09-12
3. Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation;Microelectronics Reliability;2007-06
4. Electron states at the Si-SiO2 boundary (Review);Semiconductor physics, quantum electronics and optoelectronics;2005-12-15
5. Interface states at ZnSe/Ge heterojunctions: the role of atomic interdiffusion and disorder;Applied Physics Letters;2002-12-30
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