Effect of etch treatment prior to Schottky contact fabrication on In0.05Ga0.95As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105065
Reference14 articles.
1. Schottky barrier height of n‐InxGa1−xAs diodes
2. Millimeter-wave in0.17Ga0.83 as power mesfets on GaAs(100) substrates
3. Increasing the effective barrier height of Schottky contacts to n–InxGa1−xAs
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1. Chemical polishing method of GaAs specimens for transmission electron microscopy;Micron;2010-01
2. Surface chemistry of InAlAs after (NH4)2Sxsulphidation;Semiconductor Science and Technology;1995-01-01
3. GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers;Advanced Materials for Optics and Electronics;1994-01
4. Effect of the orientations and polarities of GaAs substrates CdTe buffer layer structural properties;Materials Science and Engineering: B;1993-01
5. Ohmic Contacts to p-Type InGaAs/InP with a Graded Bandgap Heterobarrier;MRS Proceedings;1993
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