Optically active centers in Eu implanted, Euin situdoped GaN, and Eu doped GaN quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3078783
Reference29 articles.
1. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
2. Laser action in Eu-doped GaN thin-film cavity at room temperature
3. Demonstration of a visible laser on silicon using Eu-doped GaN thin films
4. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
5. Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium
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1. Closing the yellow gap with Eu- and Tb-doped GaN: one luminescent host resulting in three colours;Scientific Reports;2022-02-15
2. Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters;Applied Materials Today;2021-03
3. Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of Eu3+ ions;Physical Review B;2019-08-02
4. Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb;Journal of Luminescence;2019-06
5. Effects of Eu ions dose and annealing temperature on the structural and optical properties of Eu-implanted AlN thin films;Superlattices and Microstructures;2019-05
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