A low‐temperature process for annealing extremely shallow As+‐implantedn+/pjunctions in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333183
Reference10 articles.
1. Effect of gettering on leakage current in shallow junctions
2. Reducing the effective height of a Schottky barrier using low‐energy ion implantation
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5. Pulsed thermal annealing of ion‐implanted silicon
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