First-principles study of resistive random access memory based on single-layer black phosphorous resistive layer
Author:
Affiliation:
1. School of Electronics and Information Engineering, Anhui University, Hefei 230000, People's Republic of China
Funder
University Natural Science Research Project of Anhui Province
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0024513
Reference36 articles.
1. Nanoionics-based resistive switching memories
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