Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer-Reference-Cited by-同舟云学术

Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer

Author:

Zhou G. D.¹,Lu Z. S.¹,Yao Y. Q.¹,Wang G.¹,Yang X. D.¹²,Zhou A. K.³⁴,Li P.²,Ding B. F.¹⁵,Song Q. L.¹⁵

Affiliation:

1. Institute for Clean Energy and Advanced Materials (ICEAM), Southwest University, Chongqing 400715, China

2. School of Physics and Mechanical and Electrical Engineering, Zunyi Normal College, Zunyi 563002, People's Republic of China

3. ChinaKunming Institute of Botany, Chinese Academy Science, Kunming 650201, China

4. Department of Chemistry, Tsinghua University, Beijing 100084, China

5. Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference41 articles.

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献